unisonic technologies co., ltd 12N60 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2008 unisonic technologies co., ltd qw-r502-170.a 12 amps, 600/650 volts n-channel mosfet ? description the utc 12N60 are n-channel enhancement mode power field effect transistors (mosfet) which are produced using utc?s proprietary, planar stripe, dmos technology. these devices are suited for high efficiency switch mode power supply. to minimize on-state resi stance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. ? features * r ds(on) = 0.7 ? @v gs = 10 v * ultra low gate charge ( typical 42 nc ) * low reverse transfer capacitance ( c rss = typical 25 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain *pb-free plating product number:12N60l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing 12N60-x-ta3-t 12N60l-x-ta3-t to-220 g d s tube 12N60-x-tf3-t 12N60l-x-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
12N60 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-170.a ? absolute maximum ratings (t c = 25 , unless otherwise specified) parameter symbol ratings unit 12N60-a 600 v drain-source voltage 12N60-b v dss 650 v gate-source voltage v gss 30 v avalanche current (note 1) i ar 12 a continuous drain current i d 12 a pulsed drain current (note 1) i dm 48 a single pulsed (note 2) e as 790 mj avalanche energy repetitive (note 1) e ar 24 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns junction temperature t j +150
operating temperature t opr -55 ~ +150
storage temperature t stg -55 ~ +150
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stre ss ratings only and functional dev ice operation is not implied. ? electrical characteristics (t c =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics 12N60-a 600 v drain-source breakdown voltage 12N60-b bv dss v gs = 0 v, i d = 250 a 650 v drain-source leakage current i dss v ds = 600 v, v gs = 0 v 10 a gate-source leakage current i gss v gs = 30 v, v ds = 0 v 100 na breakdown voltage temperature coefficient bv ? dss / ? t j i d = 250 a, referenced to 25c 0.7 v/
on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 6.0a 0.55 0.7 ? dynamic characteristics input capacitance c iss 1480 1900 pf output capacitance c oss 200 270 pf reverse transfer capacitance c rss v ds = 25 v, v gs = 0 v, f = 1mhz 25 35 pf switching characteristics turn-on delay time t d(on) 30 70 ns turn-on rise time t r 115 240 ns turn-off delay time t d(off) 95 200 ns turn-off fall time t f v dd = 300v, i d = 12a, r g = 25 ? (note 4, 5) 85 180 ns total gate charge q g 42 54 nc gate-source charge q gs 8.6 nc gate-drain charge q gd v ds = 480v,i d = 12a, v gs = 10 v (note 4, 5) 21 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0 v, i s = 12a 1.4 v maximum continuous drain-source diode forward current i s 12 a maximum pulsed drain-source diode forward current i sm 48 a reverse recovery time t rr 380 ns reverse recovery charge q rr v gs = 0 v, i s = 12a, di f /dt = 100 a/s (note 4) 3.5 c notes:1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 10mh, i as = 12a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. i sd 12a, di/dt 200a/s, v dd bv dss starting t j = 25c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially indep endent of operating temperature.
12N60 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-170.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms
12N60 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-170.a ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
12N60 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-170.a ? typical characteristics notes: 1.v ds =50v 2.250 0 s pulse test 55 25 150 10 1 10 0 10 -1 24 6810 gate-source voltage, v gs (v) transfer characteristics notes: 250 0 s pulse test t c =25 top: v gs 15v 10v 8.0v 7.0v 6.5v 6.0v bottom: 5.5v 10 1 10 0 10 -1 10 0 10 1 drain-source voltage, v gs (v) on-resign characteristics
12N60 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-170.a ? typical characteristics drain current, i d (a) on-resistance, r ds(on) (m $ ) d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 10 0 10 -1 10 -2 thermal response, z , jc (t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 square wave pulse duration, t 1 (sec) transient thermal response curve notes: 1.z , jc (t)=2.27 /w max. 2.duty factor,d=t 1 /t 2 3.t jm -t c =p dm *z , jc (t) p dm t t utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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